SiC SBD

Product

SiC MOSFET

Product

Introduce SiC SBD

Introduce SiC DMOS

Key features
  • Best-in-class low VF:1.35V
  • High surge ruggedness
  • Temperature independent switching behavior
  • Low cost
  • High reliability
Key technologies
  • Advanced junction barrier schottky structure
  • Advanced termination structure
  • thin Wafer
Key features
  • Best-in-class low Rsp:≒3.3mΩ･cm2
  • Enough break down voltage
  • Low Cgd
  • Low cost
  • High reliability
Key technologies
  • Advanced DMOS self-align structure
  • Advanced termination structure
  • thin Wafer

Part Finder SiC SBD

Part Finder SiC DMOS


Reverse Voltage[V] 		Continuous Forward Current [A]
TO-220AC-2L
TO-220FP-2L
TO-247AD-2L
TO-247AD-3L
TO-252-2L
TO-263-2L
DFN8x8-5L
Bare Die

Drain-source Voltage [V] 		Drain-source On-state Resistance (Typ.) [mΩ]
TOLL-8L(KS)
TO-247AD-3L
TO-247HV-4L
TO-263-7L
Bare Die

Contents of Product Inquiry